Unveiling Precision Thermal Vision

Revolutionary MWIR/LWIR Imaging

Overcoming Thermal Imaging Challenges with Advanced MWIR/LWIR Technology

The Challenge

In industrial, scientific, and security applications, precise thermal imaging is essential for accurate detection and analysis. However, many existing systems struggle with limited sensitivity, the need for frequent manual calibration, and insufficient reliability in demanding environments. Ensuring high-resolution imaging across both MWIR (3–5 µm) and LWIR (8–12 µm) wavelength bands while maintaining a compact and lightweight design remains a significant challenge.

Our Solution

This next-generation MWIR/LWIR sensor system addresses these issues with advanced sensor technology, offering both uncooled and cooled sensor options for high-resolution thermal imaging. With a NETD of <50 mK, it provides exceptional sensitivity for precise thermal detection.

Equipped with THIRFLIS-based cooling technology and a mechanical shutter for radiation protection, the system ensures stable performance. Its integrated optical autocompensation technique eliminates the need for manual calibration, delivering consistently high-quality imaging.

Designed for long-term reliability (>25,000 hours MTTF), this compact (114 x 114 x 110 mm) and lightweight (400 g) sensor is built to perform in demanding environments, making it a powerful solution for modern thermal imaging challenges.

Join the Future of Thermal Imaging

We are shaping the next revolution in thermal imaging technology. Now is the time to be part of this breakthrough. Contact us today to explore investment opportunities and drive innovation forward.

Tentative specifications

MWIR

Characteristic	Value
Wavelength band	3 µm – 5 µm (tuneable)
NETD [K] @ F/2, 25°C, 25 Hz	< 50 mK
Cooler technology	TEC on laser diode, TEC on THIRFLIS-cell
Pixel size	3 µm x 3 µm
Number of pixels (H x V) (including reference image)	1280 x 720 at 25 fps
Dimensions (H x W x L) (uncooled) (without lens objective)	114 mm x 114 mm x 110 mm
MTTF (uncooled)	> 25.000 h
Mechanical shutter	Yes, to protect THIRFLIS-cell from very high radiation fluxes (temperature triggered)
Non-uniformity correction (NUC)	optical autocompensation technique
Mass	400 g
Power	30 W (24 VDC) (uncooled)
Video interface	SDI

LWIR

Characteristic	Value
Wavelength band	8 µm – 12 µm (tuneable)
NETD [K] @ F/2, 25°C, 25 Hz	< 50 mK
Cooler technology	TEC on laser diode, TEC on THIRFLIS-cell
Pixel size	3 µm x 3 µm
Number of pixels (H x V) (including reference image)	1280 x 720 at 25 fps
Dimensions (H x W x L) (uncooled) (without lens objective)	114 mm x 114 mm x 110 mm
MTTF (uncooled)	> 25.000 h
Mechanical shutter	Yes, to protect THIRFLIS-cell from very high radiation fluxes (temperature triggered)
Non-uniformity correction (NUC)	optical autocompensation technique
Mass	400 g
Power	30 W (24 VDC) (uncooled)
Video interface	SDI

Thermal Resolution & Validation

Simulation of the normalized signal of a THIRFLIS pixel as function of the optical readout parameter ΔI (injection current of laser diode) and change of the voxel temperature ΔT in the transformation layer with respect to the TEC temperature of 20 °C. The normalized signal S has a 10-bit resolution. Number of pixels of the CMOS sensor in the THIRFLIS TRL7 prototype is 2048 (H) x 2048 (H) with pixel pitch of 5.5 micron. THIRFLIS TRL7 prototype expected by end December 2025.

TECHNICAL RESEARCH CENTRE OF FINLAND (VTT) will characterize experimentally the THIRFLIS invention in the PHOTONHUB EUROPE Innovation Project No. 101016665, under supervision by VRIJE UNIVERSITEIT BRUSSEL (VUB).

Cooled operation of the THIRFLIS transformation layer is possible after selection of the appropriate transformation layer material (solid, liquid, gas, colloid, polymer, liquid crystal…) and cold finger temperature.

The patent

Patent is granted in

Patent is pending in

Special thanks

We thank the company AirBorn Inc. for supporting our activities and for manufacturing the connectors of the THIRFLIS prototype free of charge.